Electronic Devices and Circuits MCQs with answers Page - 46

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Q. Impurities like boron, aluminum, gallium or indium are added to intrinsic semiconductor to form ?

  • (A) N-type doped semiconductor
  • (B) P-type doped semiconductor
  • (C) A junction diode
  • (D) All of these

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Q. In a N-type semiconductor, the position of Fermi-level ?

  • (A) Is lower than the centre of energy gap
  • (B) Is at the centre of energy gap
  • (C) Is higher than the centre of energy gap
  • (D) Can be any where

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Q. The pentavalent impurities like antimony, arsenic, bismuth and phosphorus, added to intrinsic semiconductors are called ?

  • (A) Acceptor or P-type impurities
  • (B) Donor or P-type impurities
  • (C) Acceptor or N-type impurities
  • (D) Donor or N-type impurities

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Q. For silicon, the energy gap at 300 K is ?

  • (A) 1.1 W
  • (B) 1.1 J
  • (C) 1.1 Ev
  • (D) None of these

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Q. The arrow direction in the diode symbol indicates ?

  • (A) Direction of electron flow
  • (B) Direction of hole flow (Direction of conventional current)
  • (C) Opposite to the direction of hole flow
  • (D) None of the above

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Q. The knee voltage (cut in voltage) of Si diode is ?

  • (A) 0.2 V
  • (B) 0.7 V
  • (C) 0.8 V
  • (D) 1.0 V

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Q. At much lower temperature, semiconductors behave as ?

  • (A) Semiconductors only
  • (B) Conductors
  • (C) Insulators
  • (D) Conductor or insulator

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Q. Which one of the following conditions passive element ?

  • (A) Bipolar Junction Transistor (BJT)
  • (B) An Inductor
  • (C) An Operational Amplifier
  • (D) Field Effect Transistor (FET)

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Q. Reverse saturation current in germanium diode, is of the order of ?

  • (A) 1 nano Ampere
  • (B) 1 micro Ampere
  • (C) 1 milli Ampere
  • (D) 10 milli Ampere

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Q. The concentration of minority carriers in an extrinsic semiconductor under equilibrium is ?

  • (A) Directly proportional to the intrinsic concentration
  • (B) Inversely proportional to the intrinsic concentration
  • (C) Directly proportional to the doping concentration
  • (D) Inversely proportional to the doping concentration

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