Electronic Devices and Circuits MCQs with answers Page - 49

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Q. Which material may also be considered a semiconductor element ?

  • (A) carbon
  • (B) ceramic
  • (C) argon
  • (D) mica

A

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Q. In P type semiconductor material, minority carriers would be ?

  • (A) holes
  • (B) slower
  • (C) dopants
  • (D) electrons

A

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Q. In a semiconductor holes are present only ?

  • (A) Conduction band
  • (B) Valence band
  • (C) Forbidden gap
  • (D) All of these

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Q. An electron device means the device in which the conduction of electrons takes place through ?

  • (A) a gas
  • (B) a gas, semiconductor or vacuum
  • (C) vacuum
  • (D) a semiconductor

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Q. In P-N junction the avalanche breakdown voltage with semiconductor resistivity ?

  • (A) decreases
  • (B) increases
  • (C) both the parameters are independent
  • (D) decreases or increases in abrupt P-N junction

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Q. The diffused impurities with how many valence electrons are called donor atoms ?

  • (A) 4
  • (B) 3
  • (C) 5
  • (D) 0

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Q. When VGS = 0 V, a JFET is ?

  • (A) saturated
  • (B) an analog device
  • (C) an open switch
  • (D) cut off

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Q. With the E-MOSFET, when gate input voltage is zero, drain current is ?

  • (A) at saturation
  • (B) zero
  • (C) IDSS
  • (D) widening the channel

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Q. IDSS can be defined as ?

  • (A) the minimum possible drain current
  • (B) the maximum possible current with VGS held at –4 V
  • (C) the maximum possible current with VGS held at 0 V
  • (D) the maximum drain current with the source shorted

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Q. A FET is a ........... controlled device whereas a bipolar transistor is a ............ controlled device ?

  • (A) Current, voltage
  • (B) Drain, gate
  • (C) Gate, drain
  • (D) Voltage, current

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