Electronic Devices and Circuits MCQs with answers Page - 45

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Q. A forward potential of 10V is applied to a Si diode. A resistance of 1 K? is also in series with the diode. The current is ?

  • (A) 10 mA
  • (B) 9.3 mA
  • (C) 0.7 mA
  • (D) 0

A

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Q. In the diode equation, the voltage equivalent of temperature is ?

  • (A) 11600/T
  • (B) T/11600
  • (C) T x 11600
  • (D) 11600/T2

A

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Q. Barrier potential at the room tem. (250 C) is 0.7V, its value at 1250 C is ?

  • (A) 0.5 V
  • (B) 0.3 V
  • (C) 0.9 V
  • (D) 0.7 V

A

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Q. When a reverse bias is applied to a diode, it will ?

  • (A) Raise the potential barrier
  • (B) Lower the potential barrier
  • (C) Increases the majority-carrier a current greatly
  • (D) None of these

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Q. Which diode employs graded doping ?

  • (A) zener
  • (B) LED
  • (C) tunnel
  • (D) step-recovery

A

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Q. Most of the electrons that flow through the base will ?

  • (A) Flow into the collector
  • (B) Flow out of the base lead
  • (C) Recombine with base holes
  • (D) Recombine with collector holes

A

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Q. The energy gap in a semiconductor ?

  • (A) Increases with temperature
  • (B) Does not change with temperature
  • (C) Decreases with temperature
  • (D) Is zero

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Q. In an intrinsic Semiconductor the free electron concentration depends on ?

  • (A) Effective mass of electrons only
  • (B) Effective mass of holes only
  • (C) Temperature of the Semiconductor
  • (D) Width of the forbidden energy hand of the semiconductor

A

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Q. Direct band gap semiconductors ?

  • (A) Exhibit short carrier life time and they are used for fabricating BJT’s
  • (B) Exhibit long carrier life time and they are used for fabricating BJT’s
  • (C) Exhibit short carrier life time and they are used for fabricating Lasers
  • (D) Exhibit long carrier life time and they are used for fabricating BJT’s

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Q. According to the Einstein relation, for any semiconductor the ratio of diffusion constant to mobility of carriers ?

  • (A) Depends upon the temperature of the semiconductor
  • (B) Depends upon the type of the semiconductor
  • (C) Varies with life time of the semiconductor
  • (D) Is a universal constant

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