Electronic Devices and Circuits MCQs with answers Page - 47

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Q. In forward region of its characteristics, a diode appears as ?

  • (A) an ON switch
  • (B) an OFF switch
  • (C) a capacitor
  • (D) an high resistor

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Q. The doping concentration on the n-side of a p-a junction diode is enhanced. Which one of the following will get affected ?

  • (A) Width of the depletion region on n-side
  • (B) Width of the depletion region on p-side
  • (C) Width of the depletion region on both sides
  • (D) No change in width of depletion regions

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Q. In an intrinsic semiconductor, the Fermi level ?

  • (A) Lies at the centre of forbidden energy gap
  • (B) Is near the conduction band
  • (C) Is near the valence band
  • (D) May be anywhere in the forbidden energy gap

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Q. In a P type material the Fermi level is 0.3 eV above the valence band. The concentration of accepter atoms is increased. The new position of Fermi level is likely to be ?

  • (A) 0.5 eV above the valence band
  • (B) 0.2 eV above the valence band
  • (C) Below the valence band
  • (D) None of the above

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Q. Most commonly used semiconductor material is ?

  • (A) Silicon
  • (B) Germanium
  • (C) Mixture of silicon and germanium
  • (D) None of the above

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Q. In a metal ?

  • (A) The electrical conduction is by electrons and holes
  • (B) The conductivity decreases with the rise in temperature
  • (C) The conduction band is empty
  • (D) None of the above

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Q. In a P-type semiconductor, minority carriers are ?

  • (A) holes
  • (B) electrons
  • (C) dopants
  • (D) atoms

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Q. The electrodes of a semi-conductor diode are known as ?

  • (A) gate and source
  • (B) anode and cathode
  • (C) collector and base
  • (D) cathode and drain

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Q. Mobility of electrons is highest in ?

  • (A) Si
  • (B) GeAs
  • (C) Ge
  • (D) C

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Q. Which of the following ohmic resistance ?

  • (A) Copper wire
  • (B) Carbon resistance
  • (C) Diode
  • (D) Tungsten wire

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