Electronic Devices and Circuits MCQs with answers Page - 31

Here, you will find a collection of MCQ questions on Electronic Devices and Circuits. Go through these questions to enhance your preparation for upcoming examinations and interviews.

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A

Admin • 833.24K Points
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Q. The drain of FET is analogous to ......... of BJT ?

  • (A) Emitter
  • (B) Base
  • (C) Collector
  • (D) Substrate

A

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Q. The gate-source diode of a JFET should be ?

  • (A) Unbiased
  • (B) Reverse biased
  • (C) Forward biased
  • (D) None of the above

A

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Q. The drain current of the N-channel JFET increases with ?

  • (A) Increasing positive voltage at the gate
  • (B) Constant voltage at the gate
  • (C) Decreasing positive voltage at the gate
  • (D) None of the above

A

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Q. The transconductance curve of a JFET is a graph of ?

  • (A) IS versus VDS
  • (B) IC versus VCE
  • (C) ID versus VGS
  • (D) ID × RDS

A

Admin • 833.24K Points
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Q. FETs are preferred to BJTs at high frequencies because they are ?

  • (A) Less noisy
  • (B) Capable of handling highest frequencies
  • (C) Easy to fabricate
  • (D) All of the above

A

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Q. A FET can be used as a variable ?

  • (A) Inductor
  • (B) Capacitor
  • (C) Resistor
  • (D) Voltage source

A

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Q. Which component is considered to be an "OFF" device ?

  • (A) transistor
  • (B) JFET
  • (C) D-MOSFET
  • (D) E-MOSFET

A

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Q. FET acts as constant current source in ?

  • (A) Ohmic region
  • (B) Breakdown region
  • (C) Pinch off region
  • (D) Both (B and (C)

A

Admin • 833.24K Points
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Q. A FET, for its operation, depends on the variation of ?

  • (A) Forward-biased junction
  • (B) Reversed-biased junction
  • (C) Magnetic field
  • (D) The depletion-layer width with reverse voltage

A

Admin • 833.24K Points
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Q. The charge carriers in an N-channel JFET are ?

  • (A) Electrons
  • (B) Neutrons
  • (C) Protons
  • (D) Holes

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