Electronic Devices and Circuits MCQs with answers Page - 2

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Q. The barrier potential across each silicon depletion layer is

  • (A) 0v
  • (B) 0.3v
  • (C) 0.7v
  • (D) 1v

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Q. The base of an npn transistor is thin and

  • (A) heavily doped
  • (B) lightly doped
  • (C) metallic
  • (D) doped by a pentavalent material

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Q. The emitter of a transistor is generally doped the heaviest because it

  • (A) has to dissipate maximum power
  • (B) has to supply the charge carriers
  • (C) is the first region of the transistor
  • (D) must possess low resistance

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Q. When a transistor is fully switched ON, it is said to be

  • (A) shorted
  • (B) saturated
  • (C) open
  • (D) cut-off

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Q. The extremely high input impedance of a MOSFET is primarily due to the

  • (A) absence of its channel
  • (B) negative gate- source voltage
  • (C) depletion of current carriers
  • (D) extremely small leakage current of its gate capacitor

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Q. When a transistor is used as a switch, it is stable in which two distinct regions?

  • (A) saturation and active
  • (B) active and cutoff
  • (C) saturation and cutoff
  • (D) none of the above

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Q. The term BJT is short for

  • (A) base junction transistor
  • (B) binary junction transistor
  • (C) both junction transistor
  • (D) bipolar junction transistor

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Q. What are the two types of bipolar junction transistors?

  • (A) npn and pnp
  • (B) pnn and nnp
  • (C) ppn and nnp
  • (D) pts and stp

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Q. The magnitude of dark current in a phototransistor usually falls in what range?

  • (A) ma
  • (B) ma
  • (C) na
  • (D) pa

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