Analog Electronics MCQs with answers Page - 2

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Q. Which of the following is not associated with a p-n junction

  • (A) junction capacitance
  • (B) charge storage capacitance
  • (C) depletion capacitance
  • (D) channel length modulation

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Q. In a p-n junction diode under reverse bias , the magnitude of electric field is maximum at

  • (A) the edge of the depletion region on the p-side
  • (B) the edge of the depletion region on the n-side
  • (C) the p-n junction
  • (D) the center of the depletion region on the n-side

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Q. An n- channel JFET has IDSS = 2mA, and Vp = -4v. Its trans conductance gm = in mA/V) for an applied gate to source voltage VGS = -2v is

  • (A) 0.25
  • (B) 0.5
  • (C) 0.75
  • (D) 1

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Q. In a common emitter, unbypassed resister provides

  • (A) voltage shunt feedback
  • (B) current series feedback
  • (C) negative voltage feedback
  • (D) positive current feedback

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Q. A constant current signal across a parallel RLC circuits gives an o/p of 1.4v at the signal frequency of 3.89KHZ and 4.1KHZ .At the frequency of 4KHZ,the o/p voltage will be

  • (A) 1 v
  • (B) 2v
  • (C) 1.4v
  • (D) 2.8v

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Q. Class AB operation is often used in power large signal) amplifiers in order to

  • (A) get maximum efficiency
  • (B) remove even harmonics
  • (C) overcome a crossover distortion
  • (D) reducing collector dissipation

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Q. The bandwidth of an RF tuned amplifier is dependent on

  • (A) Q –factor of the tuned o/p circuit
  • (B) Q –factor of the tuned i/p circuit
  • (C) Quiescent operating point
  • (D) Q-factor of the o/p and i/p circuits as well as quiescent operating point

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Q. If =0.98 , Ico=6μA and Iβ=100μA for a transistor,then the value of Ic will be

  • (A) 2.3mA
  • (B) 3.2mA
  • (C) 4.6 mA
  • (D) 5.2 mA

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Q. The MOSFET switch in its on-state may be considered equivalent to

  • (A) resistor
  • (B) inductor
  • (C) capacitor
  • (D) battery

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Q. Most of the linear ICs are based on the two-transistor differential amplifier because of its

  • (A) input voltage dependent linear transfer characteristic
  • (B) high input resistance
  • (C) high voltage gain
  • (D) high CMRR

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